Article(id=1322531958182237023, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531779840426416, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.7.358, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1722787200000, receivedDateStr=2024-08-05, revisedDate=1728835200000, revisedDateStr=2024-10-14, acceptedDate=1730390400000, acceptedDateStr=2024-11-01, onlineDate=1793245790286, onlineDateStr=2026-10-29, pubDate=1785340800000, pubDateStr=2026-07-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245790286, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245790286, creator=13701087609, updateTime=1793245790286, updator=13701087609, issue=Issue{id=1322531779840426416, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='7', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1785340800000', pubDateStr='2026-07-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245747766, creator='13701087609', updateTime=1793245747766, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=358, endPage=368, ext={EN=ArticleExt(id=1322531959859958624, articleId=1322531958182237023, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Research on High-frequency Current Tunnel Magnetic Resistance Sensing Strategy for Distribution Line Conductors Considering Skin Effect Disturbance, columnId=1321491650891862730, journalTitle=Journal of Power Supply, columnName=Passive Devices, runingTitle=null, highlight=null, articleAbstract=
With the widespread random access of distributed resources in the new power system, precise measurement of bus current under complex operating conditions has brought new challenges. Tunnel magnetoresistance (TMR) sensors, as the latest generation of magnetoresistance sensors, integrate the advantages of high sensitivity, low power consumption, and small size of traditional magnetic sensors. They have a wide range of applications in magnetic fields detection, current detection, magnetic memory and other fields. Due to the skin effect of bus current at high frequencies, the current is concentrated in the “skin” part of the conductor, and the surrounding magnetic field exhibits nonlinear characteristics that affect the measurement of the sensor. An optimization method for arranging the position and quantity of tunnel magnetoresistance chips around the distribution bus is proposed, based on the physical characteristics of tunnel reluctance sensors and the disturbance law of skin effect. The corresponding sensor structure is designed to reduce the influence of bus skin effect and stray magnetic field on sensor measurement accuracy.
, authors=Shengwei WANG
1, Yufeng JIANG
2, Yixi WANG
1, Yuxuan YE
1, Yinfeng DU
2, authorsList=Shengwei WANG, Yufeng JIANG, Yixi WANG, Yuxuan YE, Yinfeng DU, authorCompany=null, correspAuthors=Yufeng JIANG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531961923556195, articleId=1322531958182237023, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=计及趋肤效应扰动的配电母线高频电流隧道磁阻传感策略研究, columnId=1321491651063829196, journalTitle=电源学报, columnName=无源器件, runingTitle=null, highlight=null, articleAbstract=
随着新型电力系统分布式资源的广泛随机接入,对复杂工况下母线电流的精准测量带来了新的挑战。隧道磁阻TMR(tunnel magnetoresistance)传感器作为最新一代的磁阻传感器,集传统磁传感器灵敏度高、功耗低、体积小等优势于一体,在磁场检测、电流检测、磁存储器等方面有着广泛的应用。由于母线电流在高频时存在趋肤效应,电流集中在导体的“皮肤”部分,周围磁场呈现非线性特征并影响传感器的测量。基于隧道磁阻传感器的物理特性及趋肤效应扰动规律,提出一种围绕配电母线布置隧道磁阻芯片位置与数量的优化方法,并设计了相应的传感器结构,降低了母线趋肤效应及杂散磁场对传感器测量精度的影响。
, authors=王晟玮
1, 姜雨枫
中国电源学会学生会员2, 王逸兮
1, 叶宇轩
1, 杜银锋
中国电源学会学生会员2, authorsList=王晟玮, 姜雨枫
中国电源学会学生会员, 王逸兮, 叶宇轩, 杜银锋
中国电源学会学生会员, authorCompany=null, correspAuthors=姜雨枫
中国电源学会学生会员, authorNote=
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王晟玮(1990— ),男,博士,副高级工程师。研究方向:信息与通信工程。E-mail:kadinwang1010@icloud.com。
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