Article(id=1322531791794192903, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1322531779840426416, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2026.7.29, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1711900800000, receivedDateStr=2024-04-01, revisedDate=1726848000000, revisedDateStr=2024-09-21, acceptedDate=1730563200000, acceptedDateStr=2024-11-03, onlineDate=1793245750615, onlineDateStr=2026-10-29, pubDate=1785340800000, pubDateStr=2026-07-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1793245750615, onlineIssueDateStr=2026-10-29, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1793245750615, creator=13701087609, updateTime=1793245750615, updator=13701087609, issue=Issue{id=1322531779840426416, tenantId=1146029695717560320, journalId=1146031654075715584, year='2026', volume='24', issue='7', pageStart='1', pageEnd='368', issueExtLink='null', onlineDate='null', pubDate='1785340800000', pubDateStr='2026-07-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1793245747766, creator='13701087609', updateTime=1793245747766, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext=null, issueFiles=null, downloadFileDto=null}, startPage=29, endPage=38, ext={EN=ArticleExt(id=1322531793283170824, articleId=1322531791794192903, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=An RCD Circuit Design to Suppress Gate Peak Voltage of GaN HEMT, columnId=1321491639659516540, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices and Drive Circuits, runingTitle=null, highlight=null, articleAbstract=

A gallium nitride high electron mobility transistor (GaN HEMT) is widely used in switching power supply design because of its superiority over silicon devices in terms of switching speed, switching loss, and power conversion. Due to the high di/dt and du/dt of GaN HEMT in the switching process, the gate-source of the device in the bridge circuit is easily affected by the parasitic parameters to generate excessive voltage oscillation, which will seriously affect the safety and reliability of the system. To address the above problems, firstly, the bootstrap driver circuit of GaN HEMT is constructed, the mechanism of oscillation is analyzed, and then the RCD circuit based on GaN HEMT is proposed to suppress the negative voltage spike caused by voltage oscillation. Finally, a pulse test circuit is built to experimentally verify the suppression effect of the RCD circuit. Compared with the traditional bootstrap driver circuit, the negative voltage spike after adding the RCD circuit changes from -3.35 V to -1.20 V, and there is no significant delay in the turn-on time of the turn-on process and the turn-off loss process is reduced. The above experimental results verify the effectiveness of the RCD circuit for directional suppression of gate-source oscillation.

, authors=Feiyu CHEN, Shiqing QIN, Leyang QIAN, Qianru LI, Boxiang WANG, Guofeng YANG, authorsList=Feiyu CHEN, Shiqing QIN, Leyang QIAN, Qianru LI, Boxiang WANG, Guofeng YANG, authorCompany=null, correspAuthors=Guofeng YANG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1322531794302386699, articleId=1322531791794192903, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=一种抑制GaN HEMT栅极尖峰电压的RCD电路设计, columnId=1321491641425318526, journalTitle=电源学报, columnName=功率半导体器件与驱动, runingTitle=null, highlight=null, articleAbstract=

氮化镓高电子迁移率晶体管GaN HEMT（GaN high electron mobility transistor）在开关速度、开关损耗、功率转换等方面都优于硅器件，被广泛应用于开关电源设计。由于GaN HEMT在开关过程中存在较高的电流变化率di/dt、电压变化率du/dt，因此在桥式电路中器件的栅极-源极之间容易受寄生参数影响产生过大的振荡电压，严重影响系统的安全性和可靠性。针对上述问题，首先搭建GaN HEMT的自举式驱动电路，具体分析振荡产生的机理，结合分析结果提出基于GaN HEMT的RCD电路以抑制振荡所造成的负向电压尖峰。最后，搭建脉冲测试电路对RCD电路的抑制效果进行实验验证，相比于传统的自举式驱动电路，加入RCD电路后的负向电压尖峰从-3.35 V变为-1.20 V，开通过程的导通时间无明显延迟且关断过程的损耗减少。上述实验结果验证了RCD电路对于定向抑制栅源振荡的有效性。

, authors=陈飞宇中国电源学会学生会员, 秦世清, 钱乐洋, 李倩茹, 王博翔, 杨国锋, authorsList=陈飞宇中国电源学会学生会员, 秦世清, 钱乐洋, 李倩茹, 王博翔, 杨国锋, authorCompany=null, correspAuthors=杨国锋, authorNote=, correspAuthorsNote=, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=sTTFX5331jCyUZL5JnmZbQ==, magXml=aLVVPyI5taqPWJOgnSBN/w==, pdfUrl=null, pdf=9FpYkzrifnjMOez/x4M93g==, pdfFileSize=8569787, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=rI9mHdMFKmtClahBTggosw==, mapNumber=null, fund=null)}, authors=[Author(id=1322531794654708240, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531791794192903, orderNo=0, firstName=null, middleName=null, lastName=null, nameCn=null, orcid=null, stid=null, country=null, authorPic=null, dead=0, email=6221206016@stu.jiangnan.edu.cn, emailSecond=null, emailThird=null, correspondingAuthor=0, authorType=1, ext={EN=AuthorExt(id=1322531794767954450, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531791794192903, authorId=1322531794654708240, language=EN, stringName=Feiyu CHEN, firstName=Feiyu, middleName=null, lastName=CHEN, prefix=null, suffix=Student Member, CPSS, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=School of Science, Jiangnan University, Wuxi 214122, China, bio=null, bioImg=null, bioContent=null, aboutCorrespAuthor=null), CN=AuthorExt(id=1322531794860229139, tenantId=1146029695717560320, journalId=1146031654075715584, articleId=1322531791794192903, authorId=1322531794654708240, language=CN, stringName=陈飞宇中国电源学会学生会员, firstName=null, middleName=null, lastName=null, prefix=null, suffix=null, authorComment=null, nameInitials=null, affiliation=null, department=null, xref=null, address=江南大学理学院，无锡　214122, bio={"content":"

陈飞宇（2000—　），男，中国电源学会学生会员，硕士。研究方向：宽禁带半导体器件。E-mail：6221206016@stu.jiangnan.edu.cn。

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陈飞宇（2000—　），男，中国电源学会学生会员，硕士。研究方向：宽禁带半导体器件。E-mail：6221206016@stu.jiangnan.edu.cn。

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秦世清（1998—　），男，硕士。研究方向：宽禁带半导体器件。E-mail：6211201009@stu.jiangnan.edu.cn。

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秦世清（1998—　），男，硕士。研究方向：宽禁带半导体器件。E-mail：6211201009@stu.jiangnan.edu.cn。

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钱乐洋（1999—　），男，硕士。研究方向：宽禁带半导体器件。E-mail：6231206026@stu.jiangnan.edu.cn。

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钱乐洋（1999—　），男，硕士。研究方向：宽禁带半导体器件。E-mail：6231206026@stu.jiangnan.edu.cn。

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李倩茹（1997—　），女，硕士。研究方向：宽禁带半导体器件。E-mail：6231206004@stu.jiangnan.edu.cn。

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李倩茹（1997—　），女，硕士。研究方向：宽禁带半导体器件。E-mail：6231206004@stu.jiangnan.edu.cn。

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王博翔（2004—　），男，本科。研究方向：宽禁带半导体器件。E-mail：1132220320@stu.jiangnan.edu.cn。

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王博翔（2004—　），男，本科。研究方向：宽禁带半导体器件。E-mail：1132220320@stu.jiangnan.edu.cn。

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