Article(id=1321491413041266971, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321491360620851250, articleNumber=null, orderNo=null, doi=10.13234/j.issn.2095-2805.2025.7.338, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1673884800000, receivedDateStr=2023-01-17, revisedDate=1686153600000, revisedDateStr=2023-06-08, acceptedDate=1687968000000, acceptedDateStr=2023-06-29, onlineDate=1792997704992, onlineDateStr=2026-10-26, pubDate=1764432000000, pubDateStr=2025-11-30, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1792997704992, onlineIssueDateStr=2026-10-26, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1792997704992, creator=13701087609, updateTime=1792997704992, updator=13701087609, issue=Issue{id=1321491360620851250, tenantId=1146029695717560320, journalId=1146031654075715584, year='2025', volume='23', issue='7', pageStart='1', pageEnd='348', issueExtLink='null', onlineDate='null', pubDate='1764432000000', pubDateStr='2025-11-30', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=-1, specialIssue=null, createTime=1792997692494, creator='13701087609', updateTime=1792997936183, updator='13701087609', preIssue=null, nextIssue=null, articleTotal=null, ext={EN=IssueExt(id=1321492382776931282, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321491360620851250, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1321492382776931283, tenantId=1146029695717560320, journalId=1146031654075715584, issueId=1321491360620851250, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null, downloadFileDto=null}, startPage=338, endPage=348, ext={EN=ArticleExt(id=1321491413238399260, articleId=1321491413041266971, tenantId=1146029695717560320, journalId=1146031654075715584, language=EN, title=Active Drive Technology Based on Resonant Drive, columnId=1153024086025429058, journalTitle=Journal of Power Supply, columnName=Power Semiconductor Devices, runingTitle=null, highlight=null, articleAbstract=

The research on the driving technology for SiC devices has always been a hot issue for scholars both at home and abroad. The existing active drive technology realizes the regulation of switching transient by changing the drive resistance, drive voltage or current. It requires many components, and the drive board is bulky and costly. Therefore, a full-bridge active drive technology based on resonant drive is proposed. By switching on and off the drive switch tube only, different drive circuits are constructed to form different drive currents, thus realizing the switch transient adjustment. First, the 1/4-period full-bridge resonant drive is taken as a reference drive mode for the power tube. Then, a specific design method for active drive switch timing is given by analyzing various stages during the switching on process of the power tube. Finally, through simulations and experimental verification, it is found that the drive mode can reduce 87.0% of current overshoot during the switching on process and 4.2% of voltage overshoot during the switching off process, and it can also achieve flexible speed regulation in a wide range of specific stages.

, authors=Yihua CHEN1, Han PENG1, 2, Qing XIN1, 2, authorsList=Yihua CHEN, Han PENG, Qing XIN, authorCompany=null, correspAuthors=Han PENG, authorNote=null, correspAuthorsNote=null, copyrightStatement=null, copyrightOwner=null, extLink=null, articleAbsUrl=null, sourceXml=null, magXml=null, pdfUrl=null, pdf=null, pdfFileSize=null, pdfExtLink=null, richHtmlUrl=null, mobilePdfUrl=null, reviewReport=null, pdfFirstPage=null, abstractGraph=null, abstractGraphContent=null, abstractVideo=null, citation=null, cebUrl=null, magXmlContent=null, mapNumber=null, fund=null), CN=ArticleExt(id=1321491413888516383, articleId=1321491413041266971, tenantId=1146029695717560320, journalId=1146031654075715584, language=CN, title=一种基于谐振驱动的有源驱动技术, columnId=1153024086184812611, journalTitle=电源学报, columnName=功率半导体器件, runingTitle=null, highlight=null, articleAbstract=

对于SiC器件驱动技术的研究一直是国内外学者关注的热点问题。现有有源驱动技术通过改变驱动电阻、驱动电压或电流实现开关暂态的调控,所需元器件多,驱动板体积大、成本高。为此,提出了1种基于谐振驱动的全桥有源驱动技术,仅通过驱动开关管的开通关断来切换构建不同驱动回路,形成不同驱动电流,即可实现开关暂态的调节。首先以1/4周期全桥谐振驱动为功率管的基准驱动模式,接着通过对功率管开通过程中各个阶段的分析给出了有源驱动开关管时序的具体设计方法,最后通过仿真和实验验证发现所提驱动方式能够减小开通过程87.0%的电流过冲和关断过程4.20%的电压过冲,并能实现特定阶段宽范围地灵活调速。

, authors=陈益华1, 彭晗中国电源学会会员1, 2, 辛晴1, 2, authorsList=陈益华, 彭晗中国电源学会会员, 辛晴, authorCompany=null, correspAuthors=彭晗中国电源学会会员, authorNote=

陈益华(2002— ),男,本科。研究方向:宽禁带半导体器件及其驱动技术。E-mail:。

辛晴(2000— ),女,硕士。研究方向:宽禁带半导体器件及其驱动技术。E-mail:

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彭晗(1984— ),女,中国电源学会会员,通信作者,博士,教授。研究方向:基于宽禁带半导体的电力电子器件和装置以及基于能量收集的自供电传感技术。E-mail:。
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陈益华(2002— ),男,本科。研究方向:宽禁带半导体器件及其驱动技术。E-mail:。

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一种基于谐振驱动的有源驱动技术
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陈益华 1 , 彭晗中国电源学会会员 1, 2 , 辛晴 1, 2
电源学报 | 功率半导体器件 2025,23(7): 338-348
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电源学报 |功率半导体器件 2025 , 23 (7) : 338 -348
一种基于谐振驱动的有源驱动技术
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陈益华1 , 彭晗中国电源学会会员1, 2 , 辛晴1, 2
作者信息
  • 1.华中科技大学电气与电子工程学院,武汉 430074
  • 2.强电磁技术全国重点实验室,武汉 430074
通讯作者:
彭晗(1984— ),女,中国电源学会会员,通信作者,博士,教授。研究方向:基于宽禁带半导体的电力电子器件和装置以及基于能量收集的自供电传感技术。E-mail:。
作者简介:

陈益华(2002— ),男,本科。研究方向:宽禁带半导体器件及其驱动技术。E-mail:。

辛晴(2000— ),女,硕士。研究方向:宽禁带半导体器件及其驱动技术。E-mail:

Active Drive Technology Based on Resonant Drive
Yihua CHEN1 , Han PENG Member, CPSS1, 2 , Qing XIN1, 2
Affiliations
  • 1.School of Electrical and Electronic Engineering, Huazhong University of Science and Technology, Wuhan 430074, China
  • 2.State Key Laboratory of Advanced Electromagnetic Technology, Wuhan 430074, China
出版时间: 2025-11-30 doi: 10.13234/j.issn.2095-2805.2025.7.338
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对于SiC器件驱动技术的研究一直是国内外学者关注的热点问题。现有有源驱动技术通过改变驱动电阻、驱动电压或电流实现开关暂态的调控,所需元器件多,驱动板体积大、成本高。为此,提出了1种基于谐振驱动的全桥有源驱动技术,仅通过驱动开关管的开通关断来切换构建不同驱动回路,形成不同驱动电流,即可实现开关暂态的调节。首先以1/4周期全桥谐振驱动为功率管的基准驱动模式,接着通过对功率管开通过程中各个阶段的分析给出了有源驱动开关管时序的具体设计方法,最后通过仿真和实验验证发现所提驱动方式能够减小开通过程87.0%的电流过冲和关断过程4.20%的电压过冲,并能实现特定阶段宽范围地灵活调速。

碳化硅金属氧化物半导体场效应管  /  有源驱动  /  暂态调节  /  电流过冲  /  电压过冲

The research on the driving technology for SiC devices has always been a hot issue for scholars both at home and abroad. The existing active drive technology realizes the regulation of switching transient by changing the drive resistance, drive voltage or current. It requires many components, and the drive board is bulky and costly. Therefore, a full-bridge active drive technology based on resonant drive is proposed. By switching on and off the drive switch tube only, different drive circuits are constructed to form different drive currents, thus realizing the switch transient adjustment. First, the 1/4-period full-bridge resonant drive is taken as a reference drive mode for the power tube. Then, a specific design method for active drive switch timing is given by analyzing various stages during the switching on process of the power tube. Finally, through simulations and experimental verification, it is found that the drive mode can reduce 87.0% of current overshoot during the switching on process and 4.2% of voltage overshoot during the switching off process, and it can also achieve flexible speed regulation in a wide range of specific stages.

SiC metal oxide semiconductor field effect transistor (MOSFET)  /  active drive  /  transient speed adjustment  /  current overshoot  /  voltage overshoot
陈益华, 彭晗中国电源学会会员, 辛晴. 一种基于谐振驱动的有源驱动技术. 电源学报, 2025 , 23 (7) : 338 -348 . DOI: 10.13234/j.issn.2095-2805.2025.7.338
Yihua CHEN, Han PENG, Qing XIN. Active Drive Technology Based on Resonant Drive[J]. Journal of Power Supply, 2025 , 23 (7) : 338 -348 . DOI: 10.13234/j.issn.2095-2805.2025.7.338
  • 国家自然科学基金资助项目(52007077; 52277178)
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2025年第23卷第7期
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doi: 10.13234/j.issn.2095-2805.2025.7.338
  • 接收时间:2023-01-17
  • 首发时间:2026-10-26
  • 出版时间:2025-11-30
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  • 收稿日期:2023-01-17
  • 修回日期:2023-06-08
  • 录用日期:2023-06-29
基金
National Natural Science Foundation of China(52007077; 52277178)
国家自然科学基金资助项目(52007077; 52277178)
作者信息
    1.华中科技大学电气与电子工程学院,武汉 430074
    2.强电磁技术全国重点实验室,武汉 430074

通讯作者:

彭晗(1984— ),女,中国电源学会会员,通信作者,博士,教授。研究方向:基于宽禁带半导体的电力电子器件和装置以及基于能量收集的自供电传感技术。E-mail:。
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鹅膏菌科Amanitaceae 2 11 5.26 鹅膏菌属 Amanita 10 4.78
小菇科 Mycenaceae 2 12 5.74 丝盖伞属 Inocybe 5 2.39
多孔菌科 Polyporaceae 8 14 6.70 蜡蘑属 Laccaria 5 2.39
红菇科 Russulaceae 3 23 11.00 小皮伞属 Marasmius 6 2.87
小菇属 Mycena 11 5.26
光柄菇属 Pluteus 5 2.39
红菇属 Russula 17 8.13
栓菌属 Trametes 5 2.39
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