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Article(id=1251535838451020654, tenantId=1146029695717560320, journalId=1251233871195320423, issueId=1251535833375912679, articleNumber=null, orderNo=null, doi=10.13190/j.jbupt.2024-202, pmid=null, cstr=null, oa=null, hot=null, price=null, onlineType=0, articleFormat=0, articleType=null, articleTypeStr=null, receivedDate=1728662400000, receivedDateStr=2024-10-12, revisedDate=null, revisedDateStr=null, acceptedDate=null, acceptedDateStr=null, onlineDate=1776318996297, onlineDateStr=2026-04-16, pubDate=null, pubDateStr=null, doiRegisterDate=null, doiRegisterDateStr=null, onlineIssueDate=1776318996297, onlineIssueDateStr=2026-04-16, onlineJustAcceptDate=null, onlineJustAcceptDateStr=null, onlineFirstDate=null, onlineFirstDateStr=null, sourceXml=null, magXml=null, createTime=1776318996297, creator=13701087609, updateTime=1776318996297, updator=13701087609, issue=Issue{id=1251535833375912679, tenantId=1146029695717560320, journalId=1251233871195320423, year='2025', volume='48', issue='5', pageStart='1', pageEnd='172', issueExtLink='null', onlineDate='null', pubDate='null', beforeIssueId=null, nextIssueId=null, price=null, status=1, issueComplete=1, articleOrder=1, issueType=1, specialIssue=null, createTime=1776318995087, creator=13701087609, updateTime=1776389324200, updator=13701087609, preIssue=null, nextIssue=null, ext={EN=IssueExt(id=1251830815148163525, tenantId=1146029695717560320, journalId=1251233871195320423, issueId=1251535833375912679, language=EN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=), CN=IssueExt(id=1251830815148163526, tenantId=1146029695717560320, journalId=1251233871195320423, issueId=1251535833375912679, language=CN, specialIssueTitle=, coverIllustrator=null, specialIssueEditor=, specialIssueAbout=)}, issueFiles=null}, startPage=98, endPage=104, ext={EN=ArticleExt(id=1251535838711067519, articleId=1251535838451020654, tenantId=1146029695717560320, journalId=1251233871195320423, language=EN, title=Study on the Structural Characteristics and Photoluminescence Properties of Erbium-Doped Gallium Oxide, columnId=1251535834252522218, journalTitle=Journal of Beijing University of Posts and Telecommunications, columnName=PAPERS, runingTitle=null, highlight=null, articleAbstract=

The luminescent properties of gallium oxide (Ga2 O3) doped with rare-earth erbium (Er3+) have gained significantattention due to their potential in optoelectronic and semiconductor applications. In this study, five Ga2 O3 bulk materials with varying erbium doping concentrations were prepared using solid-phase sintering. The crystal structure, micro-morphology, fluorescence characteristics, and the effect of doping concentration were systematically examined. The results show that Er3+ substitutes Ga3+and also forms a new erbium-gallium garnet (Er3 Ga5 O12) phase. As the doping concentration increases, the content of the garnet phase rises, leading to a linear increase in luminescence intensity. However, the sample with 1.00at% erbium doping shows lower red-green luminescence intensity compared to the 0.75at% sample dominated by the garnet phase, indicating that the erbium-gallium garnet phase offers superior fluorescence performance in these regions compared to the substitutional doping phase.

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稀土掺杂氧化镓（Ga2O3）的发光特性近年来备受关注，因其在光电子和半导体器件中的广泛应用潜力。本研究通过固相烧结法制备了5种不同铒（Er3+）掺杂浓度的Ga2O3块体材料，并对其晶体结构、微观形貌、荧光特性和掺杂浓度的影响进行了系统研究。结果表明，Er3+不仅以替位掺杂形式取代了Ga3+，还形成了新的铒镓石榴石（Er3Ga5O12）相。随着掺杂浓度的增加，Er3Ga5O12相的含量也逐渐增加，且伴随发光强度的线性增强。然而，1.00at%替位掺杂样品在红绿光区的发光强度反而低于0.75at%的Er3Ga5O12相样品，证明Er3Ga5O12相的发光性能优于替位掺杂。

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吴真平（1984—），男，教授，博士生导师，邮箱：。
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程添翼（2000—），男，硕士生。

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程添翼（2000—），男，硕士生。

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程添翼（2000—），男，硕士生。

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材料掺杂质量
0.50at%0.75at%1.00at%1.25at%1.50at%
Ga2O322.3690322.2839122.1988722.1142322.02971
Er2O30.229370.343710.457660.571220.68461
), ArticleFig(id=1251535845463896440, tenantId=1146029695717560320, journalId=1251233871195320423, articleId=1251535838451020654, language=CN, label=表1, caption=

制备不同Er掺杂浓度的β-Ga2O3块体所需材料

, figureFileSmall=null, figureFileBig=null, tableContent=
材料掺杂质量
0.50at%0.75at%1.00at%1.25at%1.50at%
Ga2O322.3690322.2839122.1988722.1142322.02971
Er2O30.229370.343710.457660.571220.68461
), ArticleFig(id=1251535845572948354, tenantId=1146029695717560320, journalId=1251233871195320423, articleId=1251535838451020654, language=EN, label=null, caption=null, figureFileSmall=null, figureFileBig=null, tableContent=
掺杂浓度/at%晶面间距/Å晶格常数/Å晶胞体积/Å3
（400）（002）（020）abc
0.002.97992.83591.525512.26873.14035.6718212.3049
0.502.97402.83061.524212.24443.13775.6612211.3083
0.752.97202.82881.523712.23613.13665.6576210.9627
1.002.98582.84481.527412.29293.14435.6896213.6586
1.252.96812.82351.521912.22013.13295.6470210.0427
1.502.96222.81861.520512.19583.13015.6372209.0689
), ArticleFig(id=1251535845661028750, tenantId=1146029695717560320, journalId=1251233871195320423, articleId=1251535838451020654, language=CN, label=表2, caption=

不同浓度的晶格参数计算结果

, figureFileSmall=null, figureFileBig=null, tableContent=
掺杂浓度/at%晶面间距/Å晶格常数/Å晶胞体积/Å3
（400）（002）（020）abc
0.002.97992.83591.525512.26873.14035.6718212.3049
0.502.97402.83061.524212.24443.13775.6612211.3083
0.752.97202.82881.523712.23613.13665.6576210.9627
1.002.98582.84481.527412.29293.14435.6896213.6586
1.252.96812.82351.521912.22013.13295.6470210.0427
1.502.96222.81861.520512.19583.13015.6372209.0689
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元素线系质量比/%质量比方差原子比/%
OK-series16.980.2448.68
AlK-series0.040.110.06
GaL-series74.320.5348.89
ErL-series8.660.602.37
), ArticleFig(id=1251535845858161057, tenantId=1146029695717560320, journalId=1251233871195320423, articleId=1251535838451020654, language=CN, label=表3, caption=

选点1处β-Ga2O3块体EDS数据

, figureFileSmall=null, figureFileBig=null, tableContent=
元素线系质量比/%质量比方差原子比/%
OK-series16.980.2448.68
AlK-series0.040.110.06
GaL-series74.320.5348.89
ErL-series8.660.602.37
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元素线系质量比/%质量比方差原子比/%
OK-series19.370.2351.39
AlK-series0.000.090.00
GaL-series79.260.4648.26
ErL-series1.370.520.35
), ArticleFig(id=1251535846084653489, tenantId=1146029695717560320, journalId=1251233871195320423, articleId=1251535838451020654, language=CN, label=表4, caption=

选点2处β-Ga2O3块体EDS数据

, figureFileSmall=null, figureFileBig=null, tableContent=
元素线系质量比/%质量比方差原子比/%
OK-series19.370.2351.39
AlK-series0.000.090.00
GaL-series79.260.4648.26
ErL-series1.370.520.35
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稀土铒元素掺杂氧化镓的结构特性和荧光发光性能研究
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程添翼 1 , 安宇 2 , 朱慧平 3 , 张杨 2 , 吴真平 1
北京邮电大学学报 | 论文 2025,48(5): 98-104
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北京邮电大学学报 | 论文 2025, 48(5): 98-104
稀土铒元素掺杂氧化镓的结构特性和荧光发光性能研究
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程添翼1, 安宇2, 朱慧平3, 张杨2, 吴真平1
作者信息
  • 1．北京邮电大学　物理科学与技术学院，北京　100876
  • 2．南开大学　现代光学所，天津　300071
  • 3．中国科学院　微电子研究所，北京　100029

    • 程添翼（2000—），男，硕士生。

通讯作者:

吴真平（1984—），男，教授，博士生导师，邮箱：。
Study on the Structural Characteristics and Photoluminescence Properties of Erbium-Doped Gallium Oxide
Tianyi CHENG1, Yu AN2, Huiping ZHU3, Yang ZHANG2, Zhenping WU1
Affiliations
  • 1.School of Physical Science and Technology, Beijing University of Posts and Telecommunications, Beijing 100876, China
  • 2.Institute of Modern Optics, Nankai University, Tianjin 300071, China
  • 3.Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China
doi: 10.13190/j.jbupt.2024-202
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摘要
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稀土掺杂氧化镓（Ga2O3）的发光特性近年来备受关注，因其在光电子和半导体器件中的广泛应用潜力。本研究通过固相烧结法制备了5种不同铒（Er3+）掺杂浓度的Ga2O3块体材料，并对其晶体结构、微观形貌、荧光特性和掺杂浓度的影响进行了系统研究。结果表明，Er3+不仅以替位掺杂形式取代了Ga3+，还形成了新的铒镓石榴石（Er3Ga5O12）相。随着掺杂浓度的增加，Er3Ga5O12相的含量也逐渐增加，且伴随发光强度的线性增强。然而，1.00at%替位掺杂样品在红绿光区的发光强度反而低于0.75at%的Er3Ga5O12相样品，证明Er3Ga5O12相的发光性能优于替位掺杂。

铒掺杂  /  氧化镓  /  固相烧结  /  荧光发光  /  铒镓石榴石

The luminescent properties of gallium oxide (Ga2 O3) doped with rare-earth erbium (Er3+) have gained significantattention due to their potential in optoelectronic and semiconductor applications. In this study, five Ga2 O3 bulk materials with varying erbium doping concentrations were prepared using solid-phase sintering. The crystal structure, micro-morphology, fluorescence characteristics, and the effect of doping concentration were systematically examined. The results show that Er3+ substitutes Ga3+and also forms a new erbium-gallium garnet (Er3 Ga5 O12) phase. As the doping concentration increases, the content of the garnet phase rises, leading to a linear increase in luminescence intensity. However, the sample with 1.00at% erbium doping shows lower red-green luminescence intensity compared to the 0.75at% sample dominated by the garnet phase, indicating that the erbium-gallium garnet phase offers superior fluorescence performance in these regions compared to the substitutional doping phase.

erbium doping  /  gallium oxide  /  solid state sintering  /  fluorescence  /  erbium gallium garnet
程添翼, 安宇, 朱慧平, 张杨, 吴真平. 稀土铒元素掺杂氧化镓的结构特性和荧光发光性能研究. 北京邮电大学学报, 2025 , 48 (5) : 98 -104 . DOI: 10.13190/j.jbupt.2024-202
Tianyi CHENG, Yu AN, Huiping ZHU, Yang ZHANG, Zhenping WU. Study on the Structural Characteristics and Photoluminescence Properties of Erbium-Doped Gallium Oxide[J]. Journal of Beijing University of Posts and Telecommunications, 2025 , 48 (5) : 98 -104 . DOI: 10.13190/j.jbupt.2024-202
正文
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氧化镓（Ga2O3，gallium oxide）由于其在电学与光学方面的优异性能，自1952年首次在Al2O3-Ga2O3-H2O体系相平衡的报道中被提出以来，一直是材料科学领域的研究热点之一[1]。Ga2O3具有多种晶型，包括菱方晶型α、单斜晶型β、缺陷尖晶石晶型γ和正交晶型ε[2]。在这些多晶型中，近年来最受关注的是单斜结构的β-Ga2O3，因为它是最稳定的晶型。作为一种新兴的超宽禁带半导体材料，Ga2O3具有约4.9eV的带隙宽度，加上超高的耐压能力（～8MV/cm），在深紫外光电器件和高电压高功率电力器件领域均有着巨大的应用潜力[3-7]。
近年来，已有大量关于Ga2O3掺杂的研究。例如，Nogales等[8]研究了Er掺杂的发光机理和能量传递过程；Wu等[9]研究了Nd掺杂的激发机制。此外，还有Pang等[10]制备了Dy和Li共掺杂的Ga2O3发光薄膜，发现共掺杂可以显著增强发光强度；Fujihara等[11]研究了Cr掺杂的Ga2O3光致发光（PL，photo luminescence）特性，发现掺杂Cr可以抑制原始Ga2O3材料中的绿色特征发光峰；Luchechko等[12]研究了Cr和Mg共掺杂的β-Ga2O3单晶的热释光特性；Wang等[13]通过蒙特卡洛模拟研究了Mn掺杂体系的稳定性。而Xia等[14]研究了Cr掺杂对Ga2O3光谱从多中心到单中心发射的调控。在所有这些掺杂体系中，Er掺杂发光材料的研究尤为重要，已成为过去40年来的热点之一。1983年Ennen[15]首次提出了稀土离子在半导体材料中的发光特性，研究发现由于掺杂后外层电子的屏蔽效应，Er不论掺杂在何种基质材料中，其4 I13/2-4 I15/2能级跃迁的发光波长均在1.53 μm附近。此波长对于光纤通信具有重要意义，因为1.53 μm波段对应石英光纤中最低的通信损耗窗口，极大地吸引了研究者的关注[16]。2016年，Wu等[17]研究了Er掺杂的β-Ga2O3薄膜的深紫外光导与近红外特性；2021年Yang等[18]则在硅上制备了Er掺杂Ga2O3的纳米薄膜，实现了1.53 μm的强电致发光。最新研究表明，氧空位对Er掺杂Ga2O3薄膜的光学和电学性能也有显著影响[19]。在发光领域，Ga2O3的超宽禁带与Er元素的屏蔽效应相互匹配，Ga2O3的超宽禁带能够有效抑制Er发光的温度淬灭现象，并提高其发光中心的浓度，在需要高效光源的光电集成、生物医学、发光二极管（LED，light emitting diode）发光等领域展现出巨大的应用潜力。随着光电技术的快速发展，对于高效、稳定的光电器件需求日益增加。Ga2O3是一种具有宽带隙的半导体材料，通过掺杂Er离子，可以调控其光电特性，这对于开发新型光电器件具有重要意义。目前，国内外对于Ga2O3的研究大多集中在功率器件[20-22]。因此，进一步系统研究Er掺杂Ga2O3的发光特性，对促进高性能Ga2O3光电器件的开发具有重要意义。
相比离子注入或薄膜外延法[23-26]，固相烧结法在稀土掺杂Ga2O3发光材料的制备中具有优势，因为其能够精确控制掺杂浓度、烧结温度和时间，有助于更好地理解不同掺杂浓度对晶体结构和物理性能的影响。因此，本研究采用固相烧结法制备了5种不同Er掺杂浓度的β-Ga2O3块体材料，通过X射线衍射（XRD，X-ray powder diffractometer）、扫描电镜（SEM，scanning electron microscope）、能量色散谱（EDS，energy dispersive spectroscopy）、PL等技术，系统研究了Er掺杂对Ga2O3晶格结构与荧光发光性能的影响。
1　实验设计与分析
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本研究制备了5种不同Er掺杂浓度的Ga2O3样品，掺杂浓度分别为0.50at%，0.75at%，1.00at%，1.25at%，1.50at%。所用材料为纯度99.99%的Ga2O3与纯度99.95%的Er2O3粉末。根据相对原子质量，Ga2O3分子摩尔质量为187.44g/mol，Er2O3分子摩尔质量为382.52g/mol，已知Ga2O3粉末密度为6.44g/cm3，Er2O3粉末密度为8.64g/cm3，按照3.50cm3最终体积可计算Er2O3质量分数为
其中：x为摩尔浓度，n为物质的量。由质量分数及密度可知Er2O3体积分数为
其中：m为质量，ω为质量分数，x为摩尔浓度，化简可得Er2O3质量为m1=3.5×8.64φx，Ga2O3质量为m2=3.5×6.44（1-φx）。结果如表1所示。
将称量好的粉末放入研钵中，进行约60min的均匀研磨，可以保证其混合均匀。接着，加入约0.4mL聚乙烯醇（PVA，polyvinyl alcohol）粘合剂，并继续研磨，直到粉末与粘合剂混合均匀。然后将适量的混合粉末加入粉末压片机模具中，匀速缓慢加压至15t，并保持8min使其定型不会松散。最终得到直径2.5cm、厚度约0.5cm的初步定型样品。固相烧结过程在马弗炉中进行。首先，以10 ℃/min的升温速率从室温加热至300 ℃，维持该温度30min。接着，继续以相同的速率升温至600℃，并保持30min，之后进一步升温至900 ℃，保持60min。随后，温度被提升至1450℃，并保温90min。进入降温阶段，样品在60min内降至800℃，在800℃保持30min后，最终自然冷却至室温。采用这种阶梯式升降温方法，一方面有助于在烧结过程中排除PVA粘合剂，另一方面避免了温度的骤然变化对材料结构产生不利影响。
烧结完成的样品使用BRUKER D8 XRD设备进行测试，使用Cu靶Kα射线，λ =1.5406Å，2θ的范围为10°～80°，扫描速度为10°/min，工作电流和电压分别为40mA和40kV，将样品台置入测试腔，确保样品表面与仪器中心轴对齐。启动测试程序，选择θ-θ扫描模式，并实时监测衍射图谱，检查是否存在异常峰形或噪声。样品的微观形貌与成分通过捷克TESCAN MIRA LMS进行SEM和EDS测试，样品测试前经切割、抛光处理，使用离子溅射仪在表面均匀喷镀5nm厚铂层以增强导电性。随后将样品固定于导电胶上，并装入扫描电镜样品室。测试在真空度优于5×10 -3Pa条件下进行，选取加速电压15kV。通过二次电子（SE，secondary electrons）探测器采集表面形貌图像，局部区域采用背散射电子（BSE，back scattered electron）模式分析成分衬度。为减少电荷积累，高倍成像时开启低真空模式（压力50Pa）。PL测量采用普林斯顿Acton Spectra Pro-300i系统，使用Xe灯（～450W）作为激发光源，激发波长为255nm，将处理好的样品放置于荧光光谱仪的样品台上，调整样品位置，确保激发光能够垂直且均匀地照射在样品表面。选择合适的激发光源，设定激发波长，保证采集到的荧光信号稳定且准确。
又根据布拉格公式
其中：d为晶面间距，θ为入射夹角，λ为X射线波长。
以及单斜晶系晶面间距计算公式
其中：h，k，l分别为晶面指数，a，b，c为晶格常数，β为a轴与c轴之间的夹角，则可以此分析样品晶格间距与变化趋势。
2　实验表征与讨论
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图1（a）显示了不同Er掺杂浓度下的Ga2O3样品的XRD图。可以清晰地看到，与未掺杂的纯Ga2O3相比，掺杂样品中出现了杂峰，且随着掺杂浓度的增加，这些杂峰变得更加明显。这表明样品中不仅发生了Er3+对Ga3+的替位掺杂，还伴随着Er2O3与Ga2O3的反应，形成了新的相。图1（b）通过与标准粉末衍射文件（PDF，powder diffraction file）卡片的对比，可见 β-Ga2O3的主峰与PDF 43-1012卡片非常吻合，而新增的杂峰与PDF 12-0769卡片匹配，这表明该新相为铒镓石榴石（Er3Ga5O12，erbium-gallium garnet），简称ErGG。此外，未观测到Er2O3的峰，表明Er完全参与了Ga2O3的反应。XRD数据显示，样品的主峰对应 β-Ga2O3（111）晶面，2个次峰为（400）和（-401），说明在实验条件下晶体具有高度择优取向，且不会随着掺杂浓度提高而发生改变，同时晶体的结晶度较高，峰的宽度较窄。
图2呈现了不同掺杂浓度样品（111）主峰的位置变动情况。通过观察，可以发现Er的掺杂和新相ErGG的生成对Ga2O3的晶体结构产生了影响，但这一影响并未完全遵循理论预测。尽管Er离子的半径（0.88Å）大于Ga离子在四面体位置（0.47Å）和八面体位置（0.62Å）的半径，理论上掺杂后应导致晶格常数增大，进而根据布拉格公式，主峰位置应向左偏移，且偏移程度应随掺杂浓度的增加而增大。然而，实际情况是，仅1.00at%掺杂浓度的样品主峰位置向左偏移，其余样品的主峰位置则出现了不同程度的向右偏移，并且这种偏移的幅度随着掺杂浓度的变化呈现出一定的规律性，则可以通过XRD峰位即θ的偏移计算晶格参数和晶胞体积的变化。计算结果如表2所示，表明除1.00at%浓度样品外，晶格常数与晶胞体积都随掺杂浓度增大而减小。这种异常位移现象可能是由于ErGG相的影响所致。ErGG在晶体的棱角和空隙中形成圆形晶粒，并对周围晶格施加压力，导致晶格常数减小。这一现象也在SEM图中得到验证。因此，可以将样品分为2部分，1.00at%浓度掺杂的样品中Er对于Ga的替换掺杂比较多，而在其余的浓度样品中，则主要发生的是Ga2O3与Er2O3生成ErGG的反应，并以此作为后续荧光发光实验中发光强度因发光机理的不同产生反常数据点的判断依据。
图3展示了未掺杂Ga2O3和Er掺杂浓度为0.50at%，0.75at%，1.00at%，1.25at%，1.50at%的Ga2O3样品的SEM图像。从图3中可以观察到，未掺杂的Ga2O3样品如图3（a）展现出高度的结晶性，其晶胞表面呈现出阶梯状的分层结构，显示出棱角分明的多晶形态。部分断层清晰地显示出多边形形状，且多数以倾斜的条状结构存在，这与β-Ga2O3的典型结构相吻合。对于0.50at%和0.75at% Er掺杂浓度的Ga2O3样品，如图3（b）和3（c）所示，可以注意到，微小的圆形晶粒开始逐渐出现，这是纯Ga2O3图像中所未见的特征。结合XRD的分析结果，这些圆形晶粒的出现证实了新相ErGG的形成。当Er掺杂浓度增加至1.00at%及以上时，如图3（d）～3（f）所示，圆形晶粒的数量显著增多，并逐渐聚集在一起，形成团簇结构。这一观察结果随着掺杂浓度的增加而愈发明显。这说明不仅发生了Er3+替代Ga3+的反应，Er2O3也与Ga2O3反应生成了ErGG相。ErGG的形成倾向于在晶粒的棱角和空隙处生成，这可能是由于空隙降低了ErGG相生成的能垒，使其优先形成。
为了进一步分析ErGG相的形成对样品成分的影响，利用EDS对1.50at%的样品进行了测试。图4显示了选取的2个测试点的元素分布情况。点1为圆形晶粒位置，Er含量达到2.37at%，高于设计的1.50at%，而点2（无晶粒区域）中的Er含量仅为0.35at%，说明Er元素在样品中发生了团簇聚集，但仍存在Er3+对Ga3+的替位掺杂，只是数量较少。同时，可以看到Ga与O的原子比例并不是理论上的2∶3，这是由于仪器本身所固有的误差，因为能量较低，对于C，N，O之类的轻元素有时很难检测到，而能谱中出现Al则可能是因为喷金处理导致的结果，带来了额外峰位或峰位重叠等微小影响。
Er掺杂的Ga2O3样品的光致发光光谱如图5（a）所示，发射范围为480～720nm，在255nm Xe灯激发下，样品显示出3个主要发光峰，分别位于554nm（绿色）、656nm（红色）和671nm（红色），并且随着掺杂浓度的提高，这3个峰的位置没有发生太大的改变。
这些发光峰归因于Er3+的特征跃迁：2 H11/2，4 S3/2→4 I15/2（绿色发射）和4 F9/2→4 I15/2（红色发射）。不同浓度的最强发光峰均位于671nm处，同时在656nm处有紧邻的1个次峰，这可能是斯塔克分裂所导致的，由于4 S3/2和4 F9/2能级的自旋轨道分裂，导致654nm附近的发射带被分裂成2个峰。随着掺杂浓度的增加，发光强度总体呈增强趋势，表明Er3+掺杂显著提升了Ga2 O3的发光性能。然而，也可以看到1.00at%样品的发光强度低于0.75at%样品，这与XRD和SEM结果一致，可能是由于1.00at%样品中Er的替位掺杂较多，而0.75at%样品中ErGG相的发光更为显著。图5（b）显示了去除1.00at%样品后，发光强度与掺杂浓度之间的良好线性关系。这一结果表明，在需要红区发光的应用中，如LED器件中，通过生成更多的ErGG相可以有效增强发光性能。
3　结束语
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本研究通过固相烧结法成功制备了不同浓度的Er掺杂Ga2 O3，并对其结构与发光特性进行了系统研究，得出了以下结论。
1）在高温退火过程中，Ga2O3与Er2O3反应生成了ErGG新相。SEM图像上显示，低浓度Er掺杂时，ErGG相主要分布在晶格棱角处，随着掺杂浓度的增加，ErGG相在烧结过程中产生的空隙处聚集，形成团簇，并导致相分离，进一步挤压Ga2O3晶格，造成晶格畸变。XRD数据中，随着掺杂浓度的升高，峰位逐渐向右偏移，进一步验证了这一现象。
2）Er元素的团簇效应导致样品中Er的分布不均匀。通过EDS能谱分析表明，样品中存在ErGG相的生成与替位掺杂并存的现象。结合XRD峰位与PL发光数据推测，在1.00at%浓度样品中，Er3+主要以替位掺杂的形式存在，而在其余掺杂浓度样品中，ErGG相的生成更为显著。
3）样品的光致发光特性主要由Er3+离子的能级跃迁产生，显示出3组最强发光峰，分别位于554nm（绿色）、656nm和671nm（红色）。其中，656nm和671nm紧邻的双峰现象可归因于斯塔克分裂效应。随着掺杂浓度的增加，ErGG相中的发光强度呈现出明显增强的趋势。通过对比不同掺杂浓度下的发光机理，发现1.00at%浓度样品中的Er含量高于0.75at%样品，但其发光强度却较弱，证明ErGG相在绿区与红区的发光性能优于Er3+替位掺杂的Ga2O3样品。
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doi: 10.13190/j.jbupt.2024-202
  • 接收时间：2024-10-12
  • 首发时间：2026-04-16
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  • 收稿日期：2024-10-12
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    1．北京邮电大学　物理科学与技术学院，北京　100876
    2．南开大学　现代光学所，天津　300071
    3．中国科学院　微电子研究所，北京　100029

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吴真平（1984—），男，教授，博士生导师，邮箱：。
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